In2se3 photodetector
WitrynaHere, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In 2 Se 3 -based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Witryna16 lip 2024 · With applying the tensile strain of 0.433%, the photocurrent of the photodetector can be enhanced by about 18 times. Furthermore, the photodetectors present remarkable photoresponsivity and detectivity that can reach up to 4.61 × 10 5 A W −1 and 4.34 × 10 14 Jones, respectively. These results indicate that the piezo …
In2se3 photodetector
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WitrynaIn this work, we present the assembly of a γ-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 × 10 device units. The layered γ-In2Se3 films with a well-defined pattern are deposited directly onto a planar GaAs substrate via radio-frequency (RF) magnetron sputtering deposition assist Witryna8 lut 2024 · Two-dimensional α-In2Se3 has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching...
Witryna23 kwi 2024 · In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response Abstract: We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated β-Indium selenide (In 2 Se 3 ) on sapphire with a clear signature of band edge in spectral responsivity at a wavelength … Witryna23 mar 2024 · On the basis of the in-plane switchable diode effect and the narrow band gap (∼1.3 eV) of ferroelec. In2Se3, a prototypical nonvolatile memory device, which …
Witryna20 gru 2024 · Self-Assembly High-Performance UV-vis-NIR Broadband β-In 2 Se 3 /Si Photodetector Array for Weak Signal Detection ACS Appl Mater Interfaces. 2024 Dec 20;9 (50):43830-43837. doi: 10.1021/acsami.7b16329. Epub 2024 Dec 11. Authors Zhaoqiang Zheng 1 , Jiandong Yao 2 , Bing Wang 3 , Yibin Yang 1 , Guowei Yang 2 , … Witryna15 lip 2024 · In this study, to overcome the low sensitivity of photodetectors in the infrared wavelength range, a photodetector comprising a 2D semiconductor (WSe 2) …
Witryna6 gru 2024 · Progress and challenges on the applications of In 2 Se 3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In 2 Se 3 materials are presented. …
Witryna9 lis 2024 · 2D materials are considered the future of electronics and photonics, stimulated by their remarkable performance. Among the 2D materials family, β-In 2 … rawtenstall thriveWitrynaThe InSe devices fabricated on rigid SiO 2 /Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO 2 /Si. rawtenstall to blackburnWitryna12 lis 2024 · This photodetector shows a clear response to the light ranging from 650 nm to 900 nm. This phenomenon indicates the device has a multispectral response. … rawtenstall to burnleyWitrynaThe α-In2Se3 THz Photodetector Abstract: Terahertz (THz) photodetectors are widely used for applications related to security measurements and medicine due to their … simple map of canadaWitrynaSpecifically, the γ-In 2 Se 3 /n-Si photodetector has a responsivity of 0.57 A W −1, a specific detectivity of 2.6 × 10 12 Jones and a fast response speed (35/115 μs for τr / τf) under 808 nm light illumination, respectively, which are slightly better or comparable to other devices with similar geometries. rawtenstall theatreWitryna10 kwi 2024 · Here, we demonstrate a mixed-dimensional WS2/WSe2/p-Si unipolar barrier photodetector, in which 2D WS2 acts as the photon absorber, atomically thin WSe2 as the unipolar barrier, and 3D p-Si as the photogenerated carrier collector. ... Growth of centimeter-scale high-quality In2Se3 films for transparent, flexible and high … rawtenstall to burnley busWitryna11 kwi 2024 · The vdWs stacked photodetector with an improved type-II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode-like behavior. This behavior is further confirmed by the high-resolution scanning photocurrent mapping. rawtenstall to leeds